- Headquarters
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Future Business Centre, King’s Hedges Road
Cambridge, CB4 2HY, UK
United Kingdom
Kubos was formed to commercialise the technology first developed in a partnership between the University of Cambridge, who successfully grew cubic-GaN on 3C-SiC (cubic silicon carbide) on silicon wafers by MOCVD (metal oxide chemical vapour-phase deposition), and Anvil Semiconductors, who produced the underlying 3C-SiC layers using its patented stress relief IP that enables growth of device quality silicon carbide on 150 mm diameter silicon wafers. Together they created a world first technology for which Kubos has the exclusive transferable licence.
Kubos is working towards developing low energy consuming LEDs using our proprietary cubic-GaN technology (Patent Pending) in order to bridge the under-developed region of the visible spectrum. The LED stacks with our technology can be easily integrated into the pre-existing commercial LED fabrication process enabling the increased efficiency of green LEDs and a reduction in the cost of LED lighting.
Kubos’ IP enables the growth of single phase cubic-GaN on large diameter cubic silicon carbide (3C-SiC) wafers grown on silicon. These wafers have been successfully fabricated on commercial LED processing foundry.
Our technology can provide a fundamental advantage wherever RGB LEDs are required. Our technology overcomes the internal electric fields that cause the green gap in more conventional LEDs, thus significantly improving their efficiency in the longer wave lengths.
Kubos’ technology circumvents the performance limiting issues because LEDs based on our cubic- InGaN/GaN show minimal Quantum Confined Stark Effect (QCSE) compared with conventional hexagonal nitride technology. In addition, it avoids the concern relating to poor carrier confinement and the potential for the material to have an indirect bandgap which impacts phosphide based devices. In comparison to hexagonal-GaN technology, cubic LEDs require less indium in the InGaN QW layer to achieve long wavelength emission. This is a benefit over LEDs produced in both non- and semi- polar GaN.
Kubos’ cubic-GaN technology enables a major improvement in the light output particularly in the under-developed region of the visible spectrum (green and amber colours) when compared with the current commercially available LEDs.
Kubos’ technology can provide a fundamental advantage wherever RGB LEDs are required, enabling the full potential efficiency of warm white or tunable RGB lighting, displays and high-intensity lights to be realised. The application in micro-LEDs could be transformative in breaking into the mainstream market. cubic-GaN LED stacks can directly substitute conventional substrates, enabling chip and product developers to easily take advantage of the technology.
Kubos is working towards developing low energy consuming LEDs using our proprietary cubic-GaN technology (Patent Pending) in order to bridge the under-developed region of the visible spectrum. The LED stacks with our technology can be easily integrated into the pre-existing commercial LED fabrication process enabling the increased efficiency of green LEDs and a reduction in the cost of LED lighting.
Kubos’ IP enables the growth of single phase cubic-GaN on large diameter cubic silicon carbide (3C-SiC) wafers grown on silicon. These wafers have been successfully fabricated on commercial LED processing foundry.
Our technology can provide a fundamental advantage wherever RGB LEDs are required. Our technology overcomes the internal electric fields that cause the green gap in more conventional LEDs, thus significantly improving their efficiency in the longer wave lengths.
Kubos’ technology circumvents the performance limiting issues because LEDs based on our cubic- InGaN/GaN show minimal Quantum Confined Stark Effect (QCSE) compared with conventional hexagonal nitride technology. In addition, it avoids the concern relating to poor carrier confinement and the potential for the material to have an indirect bandgap which impacts phosphide based devices. In comparison to hexagonal-GaN technology, cubic LEDs require less indium in the InGaN QW layer to achieve long wavelength emission. This is a benefit over LEDs produced in both non- and semi- polar GaN.
Kubos’ cubic-GaN technology enables a major improvement in the light output particularly in the under-developed region of the visible spectrum (green and amber colours) when compared with the current commercially available LEDs.
Kubos’ technology can provide a fundamental advantage wherever RGB LEDs are required, enabling the full potential efficiency of warm white or tunable RGB lighting, displays and high-intensity lights to be realised. The application in micro-LEDs could be transformative in breaking into the mainstream market. cubic-GaN LED stacks can directly substitute conventional substrates, enabling chip and product developers to easily take advantage of the technology.
